IXTQ30N60P

Specifications

Category

Power MOSFET

Typical Turnon Delay Time Ns

29

Eu Rohs

Compliant with Exemption

Tab

Tab

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Maximum Gate Source Voltage V

±30

Lead Shape

Through Hole

Typical Rise Time Ns

20

Typical Gate Charge10v Nc

82

Number Of Elements Per Chip

1

Configuration

Single

Maximum Drain Source Resistance Mohm

240@10V

Typical Gate Charge Vgs Nc

82@10V

Typical Fall Time Ns

25

Maximum Drain Source Voltage V

600

Pcb Changed

3

Channel Type

N

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

80

Typical Input Capacitance Vds Pf

5050@25V

Automotive

No

Supplier Package

TO-3P

Maximum Power Dissipation Mw

540000

Standard Package Name

TO-3P

Maximum Continuous Drain Current A

30

Parça Durumu

Active

Package Width

4.9(Max)

Package Length

15.8(Max)

Maximum Operating Temperature C

150