IXTQ30N50L2

Specifications

Typical Gate Charge Vgs Nc

240@10V

Maximum Drain Source Resistance Mohm

215@10V

Typical Fall Time Ns

40

Configuration

Single

Maximum Drain Source Voltage V

500

Rds On Drainsource Resistance

200 mOhms

Pcb Changed

3

Kılıf / Paket

TO-3P-3

Typical Rise Time Ns

117

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Elements Per Chip

1

Id Continuous Drain Current

30 A

Typical Gate Charge10v Nc

240

Mounting

Through Hole

Montaj Stili

Through Hole

Pin Sayısı

3

Ppap

No

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

500 V

Typical Turnon Delay Time Ns

35

Category

Power MOSFET

Tab

Tab

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Pd Power Dissipation

400 W

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Package Length

15.8(Max)

Package Width

4.9(Max)

Parça Durumu

Active

Transistor Polarity

N-Channel

Supplier Package

TO-3P

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Hts

8541.29.00.95

Maximum Continuous Drain Current A

30

Maximum Gate Threshold Voltage V

4.5

Maximum Idss Ua

50

Qg Gate Charge

240 nC

Maximum Power Dissipation Mw

400000