IXTQ18N60P

Specifications

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Pd Power Dissipation

360 W

Transistor Polarity

N-Channel

Package Length

15.8(Max)

Package Width

4.9(Max)

Parça Durumu

Active

Maximum Continuous Drain Current A

18

Maximum Power Dissipation Mw

360000

Standard Package Name

TO-3P

Supplier Package

TO-3P

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Typical Turnoff Delay Time Ns

62

Typical Input Capacitance Vds Pf

2500@25V

Minimum Operating Temperature C

-55

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Seri

IXTQ18N60

Maximum Drain Source Voltage V

600

Pcb Changed

3

Rds On Drainsource Resistance

420 mOhms

Typical Gate Charge Vgs Nc

49@10V

Maximum Drain Source Resistance Mohm

420@10V

Typical Fall Time Ns

22

Configuration

Single

Number Of Elements Per Chip

1

Id Continuous Drain Current

18 A

Typical Gate Charge10v Nc

49

Typical Rise Time Ns

22

Kılıf / Paket

TO-3P-3

Vgs Gatesource Voltage

- 30 V, + 30 V

Lead Shape

Through Hole

Maximum Gate Source Voltage V

±30

Vds Drainsource Breakdown Voltage

600 V

Mounting

Through Hole

Montaj Stili

Through Hole

Pin Sayısı

3

Ppap

No