IXTQ180N10T

Specifications

Typical Gate Charge10v Nc

151

Id Continuous Drain Current

180 A

Number Of Elements Per Chip

1

Kılıf / Paket

TO-3P-3

Typical Rise Time Ns

54

Pcb Changed

3

Rds On Drainsource Resistance

6.4 mOhms

Maximum Drain Source Voltage V

100

Configuration

Single

Typical Fall Time Ns

31

Maximum Drain Source Resistance Mohm

6.4@10V

Typical Gate Charge Vgs Nc

151@10V

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

33

Vds Drainsource Breakdown Voltage

100 V

Lead Shape

Through Hole

Ppap

Unknown

Pin Sayısı

3

Montaj Stili

Through Hole

Mounting

Through Hole

Transistor Polarity

N-Channel

Package Width

4.9(Max)

Parça Durumu

Active

Package Length

15.8(Max)

Number Of Channels

1 Channel

Maximum Operating Temperature C

175

Pd Power Dissipation

480 W

Typical Input Capacitance Vds Pf

6900@25V

Typical Turnoff Delay Time Ns

42

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

480000

Standard Package Name

TO-3P

Maximum Continuous Drain Current A

180

Maks. Çalışma Sıcaklığı

+ 175 C