IXTQ14N60P

Specifications

Vds Drainsource Breakdown Voltage

600 V

Maximum Gate Source Voltage V

±30

Lead Shape

Through Hole

Ppap

No

Pin Sayısı

3

Montaj Stili

Through Hole

Mounting

Through Hole

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

23

Rds On Drainsource Resistance

450 mOhms

Pcb Changed

3

Maximum Drain Source Voltage V

600

Configuration

Single

Typical Fall Time Ns

26

Typical Gate Charge Vgs Nc

36@10V

Maximum Drain Source Resistance Mohm

550@10V

Typical Gate Charge10v Nc

36

Id Continuous Drain Current

14 A

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 30 V, + 30 V

Kılıf / Paket

TO-3P-3

Typical Rise Time Ns

27

Qg Gate Charge

36 nC

Maximum Power Dissipation Mw

300000

Standard Package Name

TO-3P

Maximum Continuous Drain Current A

14

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Supplier Package

TO-3P

Typical Input Capacitance Vds Pf

2300@25V

Typical Turnoff Delay Time Ns

70

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Vgs Th Gatesource Threshold Voltage

5.5 V

Minimum Operating Temperature C

-55

Number Of Channels

1 Channel