IXTQ130N20T

Specifications

Typical Rise Time Ns

18

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

150

Maximum Drain Source Resistance Mohm

16@10V

Typical Gate Charge Vgs Nc

150@10V

Typical Fall Time Ns

22

Configuration

Single

Maximum Drain Source Voltage V

200

Pcb Changed

3

Typical Turnon Delay Time Ns

25

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Mounting

Through Hole

Pin Sayısı

3

Ppap

No

Maximum Gate Source Voltage V

±20

Package Length

15.8(Max)

Package Width

4.9(Max)

Parça Durumu

Active

Eccn Us

EAR99

Maximum Operating Temperature C

175

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Channel Type

N

Typical Turnoff Delay Time Ns

57

Typical Input Capacitance Vds Pf

8800@25V

Supplier Package

TO-3P

Automotive

No

Maximum Continuous Drain Current A

130

Maximum Power Dissipation Mw

830000