IXTQ120N20P

Specifications

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

30

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

200 V

Lead Shape

Through Hole

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Montaj Stili

Through Hole

Id Continuous Drain Current

120 A

Typical Gate Charge10v Nc

152

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Rise Time Ns

35

Kılıf / Paket

TO-3P-3

Maximum Drain Source Voltage V

200

Pcb Changed

3

Rds On Drainsource Resistance

22 mOhms

Configuration

Single

Typical Gate Charge Vgs Nc

152@10V

Maximum Drain Source Resistance Mohm

22@10V

Typical Fall Time Ns

31

Typical Turnoff Delay Time Ns

100

Typical Input Capacitance Vds Pf

6000@25V

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

5 V

Qg Gate Charge

152 nC

Maximum Power Dissipation Mw

714000

Standard Package Name

TO-3P

Hts

8541.10.00.80

Maximum Continuous Drain Current A

120

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

No

Supplier Package

TO-3P