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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Typical Turnoff Delay Time Ns
- 65
- Pulsed Drain Currentmax Idm
- 250A
- Vgs Th Gatesource Threshold Voltage
- 5 V
- Minimum Operating Temperature C
- -55
- Power Dissipation Max
- 480W Tc
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Maximum Continuous Drain Current A
- 110
- Hts
- 8541.29.00.95
- Maks. Çalışma Sıcaklığı
- + 175 C
- Automotive
- No
- Fet Type
- N-Channel
- Continuous Drain Current Id
- 110A
- REACH Uyumluluk Kodu
- unknown
- Transistor Polarity
- N-Channel
- Parça Durumu
- Active
- Package Width
- 4.9(Max)
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Package Length
- 15.8(Max)
- Input Capacitance Ciss Max Vds
- 3550pF @ 25V
- Rise Time
- 25ns
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 65 ns
- Minimum Operating Temperature
- - 55 C
- Tab
- Tab
- Drain To Source Breakdown Voltage
- 100V
- Typical Turnon Delay Time Ns
- 21
- Avalanche Energy Rating Eas
- 1000 mJ
- Maximum Gate Source Voltage V
- ±20
- Lead Shape
- Through Hole
- Ppap
- No
- Number Of Elements
- 1
- Montaj Stili
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Typical Rise Time Ns
- 25
- Power Dissipation
- 480W
- Rds On Drainsource Resistance
- 15 mOhms
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