IXTQ10P50P

Specifications

Typical Fall Time Ns

44

Typical Gate Charge Vgs Nc

50@10V

Maximum Drain Source Resistance Mohm

1000@10V

Configuration

Single

Pcb Changed

3

Typical Reverse Recovery Time Ns

414

Maximum Drain Source Voltage V

500

Typical Output Capacitance Pf

275

Typical Rise Time Ns

28

Minimum Gate Threshold Voltage V

2

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

50

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Typical Reverse Recovery Charge Nc

5900

Maximum Gate Source Voltage V

±20

Maximum Pulsed Drain Current Tc25c A

30

Typical Turnon Delay Time Ns

20

Category

Power MOSFET

Tab

Tab

Typical Gate To Drain Charge Nc

18

Eu Rohs

Compliant with Exemption

Operating Junction Temperature C

-55 to 150

Maximum Diode Forward Voltage V

3

Maximum Operating Temperature C

150

Typical Reverse Transfer Capacitance Vds Pf

42@25V

Package Length

15.8(Max)

Package Width

4.9(Max)

Parça Durumu

Active

Eccn Us

EAR99

Supplier Package

TO-3P

Automotive

No

Maximum Continuous Drain Current A

10

Hts

8541.29.00.95

Typical Gate To Source Charge Nc

17

Maximum Power Dissipation Mw

300000

Maximum Gate Threshold Voltage V

4.5

Maximum Idss Ua

10

Minimum Operating Temperature C

-55