IXTP90N15T

Specifications

Minimum Operating Temperature C

-55

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Typical Input Capacitance Vds Pf

4100@25V

Typical Turnoff Delay Time Ns

44

Supplier Package

TO-220

Automotive

No

Maks. Çalışma Sıcaklığı

+ 175 C

Maximum Continuous Drain Current A

90

Maximum Power Dissipation Mw

455000

Package Height

9.15(Max)

Package Length

10.66(Max)

Package Width

4.83(Max)

Parça Durumu

NRND

Transistor Polarity

N-Channel

Pd Power Dissipation

455 W

Maximum Operating Temperature C

175

Number Of Channels

1 Channel

Process Technology

TrenchFET

Typical Turnon Delay Time Ns

24

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Montaj Stili

Through Hole

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

150 V

Maximum Gate Source Voltage V

±30

Kılıf / Paket

TO-220-3

Typical Rise Time Ns

22

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

80

Id Continuous Drain Current

90 A

Typical Fall Time Ns

19

Maximum Drain Source Resistance Mohm

20@10V

Typical Gate Charge Vgs Nc

80@10V