IXTP80N075L2

Specifications

Svhc Exceeds Threshold

Yes

Maximum Drain Source Resistance Mohm

24@10V

Typical Fall Time Ns

12

Maximum Drain Source Voltage V

75

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-220-3

Id Continuous Drain Current

80 A

Typical Gate Charge10v Nc

103

Number Of Elements Per Chip

1

Pin Sayısı

3

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

75 V

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Pd Power Dissipation

357 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Supplier Package

TO-220

Maximum Gate Threshold Voltage V

4.5

Maximum Power Dissipation Mw

357000

Qg Gate Charge

103 nC

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Maximum Gate Source Leakage Current Na

100

Typical Input Capacitance Vds Pf

3600@25V

Configuration

Single

Power Dissipation

357W

Rds On Drainsource Resistance

24 mOhms

Pcb Changed

3

Typical Rise Time Ns

35

Ppap

No

Montaj Stili

Through Hole

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time Ns

15

Minimum Operating Temperature

- 55 C

Tab

Tab

Svhc

Yes

Parça Durumu

Active

Package Width

4.83(Max)