IXTP6N100D2

Specifications

Continuous Drain Current Id

6A

Transistor Polarity

N-Channel

Package Width

4.83(Max)

Parça Durumu

Active

Package Length

10.66(Max)

Package Height

9.15(Max)

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Pd Power Dissipation

300 W

Typical Turnoff Delay Time Ns

34

Typical Input Capacitance Vds Pf

2650@25V

Channel Type

N

Channel Mode

Depletion

Technology

Si

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4.5 V

Qg Gate Charge

95 nC

Maximum Power Dissipation Mw

300000

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Supplier Package

TO-220AB

Id Continuous Drain Current

6 A

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Rise Time Ns

80

Kılıf / Paket

TO-220-3

Power Dissipation

300W

Maximum Drain Source Voltage V

1000

Rds On Drainsource Resistance

2.2 Ohms

Pcb Changed

3

Configuration

Single

Typical Gate Charge Vgs Nc

95@5V

Maximum Drain Source Resistance Mohm

2200@0V

Typical Fall Time Ns

47

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

25

Maximum Gate Source Voltage V

±20