IXTP64N10L2

Specifications

Ppap

No

Montaj Stili

Through Hole

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

100 V

Category

Power MOSFET

Typical Turnon Delay Time Ns

14

Eu Rohs

Compliant

Minimum Operating Temperature

- 55 C

Configuration

Single

Maximum Drain Source Resistance Mohm

32@10V

Typical Gate Charge Vgs Nc

100@10V

Typical Fall Time Ns

11

Maximum Drain Source Voltage V

100

Rds On Drainsource Resistance

32 mOhms

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-220-3

Typical Rise Time Ns

27

Id Continuous Drain Current

64 A

Typical Gate Charge10v Nc

100

Number Of Elements Per Chip

1

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Idss Ua

5

Maximum Gate Threshold Voltage V

4.5

Qg Gate Charge

100 nC

Maximum Power Dissipation Mw

357000

Maximum Continuous Drain Current A

64

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Maximum Gate Source Leakage Current Na

100

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Turnoff Delay Time Ns

38

Typical Input Capacitance Vds Pf

3620@25V

Pd Power Dissipation

357 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Parça Durumu

Active

Eccn Us

EAR99