IXTP56N15T

Specifications

Rds On Drainsource Resistance

36 mOhms

Pcb Changed

3

Maximum Drain Source Voltage V

150

Configuration

Single

Typical Fall Time Ns

18

Maximum Drain Source Resistance Mohm

36@10V

Typical Gate Charge Vgs Nc

34@10V

Typical Gate Charge10v Nc

34

Id Continuous Drain Current

56 A

Number Of Elements Per Chip

1

Kılıf / Paket

TO-220-3

Typical Rise Time Ns

17

Vds Drainsource Breakdown Voltage

150 V

Maximum Gate Source Voltage V

±20

Ppap

No

Pin Sayısı

3

Montaj Stili

Through Hole

Mounting

Through Hole

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

16

Process Technology

TMOS

Maximum Operating Temperature C

175

Parça Durumu

Active

Package Width

4.83(Max)

Package Height

9.15(Max)

Package Length

10.66(Max)

Maximum Power Dissipation Mw

300000

Maximum Gate Threshold Voltage V

5

Maximum Idss Ua

5

Maximum Continuous Drain Current A

56

Automotive

No

Supplier Package

TO-220

Typical Input Capacitance Vds Pf

2250@25V

Typical Turnoff Delay Time Ns

43

Channel Mode

Enhancement

Technology

Si

Channel Type

N

Maximum Gate Source Leakage Current Na

100