IXTP50N25T

Specifications

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

3 V

Typical Turnoff Delay Time Ns

47

Typical Input Capacitance Vds Pf

4000@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Supplier Package

TO-220AB

Qg Gate Charge

78 nC

Maximum Power Dissipation Mw

400000

Hts

8541.29.00.95

Maximum Continuous Drain Current A

50

Package Width

4.83(Max)

Parça Durumu

Active

Package Length

10.66(Max)

Package Height

9.15(Max)

Continuous Drain Current Id

50A

Eccn Us

EAR99

Transistor Polarity

N-Channel

Pd Power Dissipation

400 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Turnon Delay Time Ns

14

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant

Tab

Tab

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Montaj Stili

Through Hole

Vds Drainsource Breakdown Voltage

250 V

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Rise Time Ns

25

Kılıf / Paket

TO-220-3

Id Continuous Drain Current

50 A

Typical Gate Charge10v Nc

78

Number Of Elements Per Chip

1