IXTP3N50D2

Specifications

Pcb Changed

3

Maximum Drain Source Voltage V

500

Power Dissipation

125W

Typical Fall Time Ns

42

Typical Gate Charge Vgs Nc

40@5V

Maximum Drain Source Resistance Mohm

1500@0V

Configuration

Single

Number Of Elements Per Chip

1

Typical Rise Time Ns

71

Maximum Gate Source Voltage V

±20

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Tab

Tab

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

27

Category

Power MOSFET

Maximum Operating Temperature C

150

Continuous Drain Current Id

3A

Package Length

10.66(Max)

Package Height

9.15(Max)

Package Width

4.83(Max)

Parça Durumu

Active

Maximum Power Dissipation Mw

125000

Supplier Package

TO-220AB

Automotive

No

Typical Input Capacitance Vds Pf

1070@25V

Typical Turnoff Delay Time Ns

56

Minimum Operating Temperature C

-55

Channel Mode

Depletion

Channel Type

N