IXTP3N100P

Specifications

Pd Power Dissipation

125 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Package Width

4.83(Max)

Parça Durumu

Active

Package Length

10.66(Max)

Package Height

9.15(Max)

Transistor Polarity

N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Supplier Package

TO-220

Qg Gate Charge

39 nC

Maximum Power Dissipation Mw

125000

Maximum Continuous Drain Current A

3

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Vgs Th Gatesource Threshold Voltage

4.8 V

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

1100@25V

Typical Turnoff Delay Time Ns

75

Configuration

Single

Typical Fall Time Ns

29

Typical Gate Charge Vgs Nc

39@10V

Maximum Drain Source Resistance Mohm

4800@10V

Pcb Changed

3

Rds On Drainsource Resistance

4.8 Ohms

Maximum Drain Source Voltage V

1000

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Rise Time Ns

27

Kılıf / Paket

TO-220-3

Typical Gate Charge10v Nc

39

Id Continuous Drain Current

3 A

Number Of Elements Per Chip

1

Ppap

No

Pin Sayısı

3

Montaj Stili

Through Hole

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

1 kV

Maximum Gate Source Voltage V

±20