IXTP32P20T

Specifications

Configuration

Single

Rds On Drainsource Resistance

130 mOhms

Pcb Changed

3

Power Dissipation

300W

Typical Rise Time Ns

15

Montaj Stili

Through Hole

Ppap

No

Maximum Gate Source Voltage V

±15

Typical Turnon Delay Time Ns

32

Tab

Tab

Minimum Operating Temperature

- 55 C

Package Height

9.15(Max)

Package Length

10.66(Max)

Parça Durumu

Active

Package Width

4.83(Max)

Transistor Polarity

P-Channel

Eccn Us

EAR99

Continuous Drain Current Id

32A

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Maximum Continuous Drain Current A

32

Hts

8541.29.00.95

Maximum Idss Ua

25

Vgs Th Gatesource Threshold Voltage

4 V

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

57

Typical Fall Time Ns

12

Maximum Drain Source Resistance Mohm

130@10V

Maximum Drain Source Voltage V

200

Kılıf / Paket

TO-220-3

Vgs Gatesource Voltage

- 15 V, + 15 V

Number Of Elements Per Chip

1

Id Continuous Drain Current

32 A

Mounting

Through Hole

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

200 V

Category

Power MOSFET

Eu Rohs

Compliant

Pd Power Dissipation

300 W

Maximum Operating Temperature C

150