IXTP32N65XM

Specifications

Maximum Continuous Drain Current A

32

Maximum Power Dissipation Mw

78000

Maximum Idss Ua

5

Maximum Gate Threshold Voltage V

5.5

Supplier Package

OVERMOLDED TO-220

Automotive

No

Typical Input Capacitance Vds Pf

2206@25V

Typical Turnoff Delay Time Ns

58

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

100

Channel Mode

Enhancement

Channel Type

N

Maximum Operating Temperature C

150

Eccn Us

EAR99

Package Length

10.36(Max)

Package Height

16.07(Max)

Parça Durumu

NRND

Package Width

4.9(Max)

Maximum Gate Source Voltage V

±30

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Tab

Tab

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

23

Category

Power MOSFET

Pcb Changed

3

Maximum Drain Source Voltage V

650

Typical Fall Time Ns

28

Typical Gate Charge Vgs Nc

54@10V

Maximum Drain Source Resistance Mohm

135@10V

Configuration

Single

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

54

Typical Rise Time Ns

49