IXTP300N04T2

Specifications

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-220-3

Typical Rise Time Ns

17

Id Continuous Drain Current

300 A

Typical Gate Charge10v Nc

145

Number Of Elements Per Chip

1

Configuration

Single

Maximum Drain Source Resistance Mohm

2.5@10V

Typical Gate Charge Vgs Nc

145@10V

Typical Fall Time Ns

13

Maximum Drain Source Voltage V

40

Rds On Drainsource Resistance

2.5 mOhms

Pcb Changed

3

Category

Power MOSFET

Typical Turnon Delay Time Ns

22

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Tab

Tab

Pin Sayısı

3

Ppap

Unknown

Mounting

Through Hole

Montaj Stili

Through Hole

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

40 V

Parça Durumu

Active

Package Width

4.83(Max)

Package Height

9.15(Max)

Package Length

10.66(Max)

Transistor Polarity

N-Channel

Pd Power Dissipation

480 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

175

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Seri

IXTP300N04

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4 V

Typical Turnoff Delay Time Ns

32

Typical Input Capacitance Vds Pf

10700@25V