IXTP26P10T

Specifications

Typical Turnon Delay Time Ns

20

Minimum Operating Temperature

- 55 C

Tab

Tab

Ppap

No

Montaj Stili

Through Hole

Maximum Gate Source Voltage V

±15

Typical Rise Time Ns

15

Configuration

Single

Pcb Changed

3

Rds On Drainsource Resistance

90 mOhms

Vgs Th Gatesource Threshold Voltage

4.5 V

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

37

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Idss Ua

10

Maximum Continuous Drain Current A

26

Parça Durumu

Active

Package Width

4.83(Max)

Package Length

10.66(Max)

Package Height

9.15(Max)

Eccn Us

EAR99

Transistor Polarity

P-Channel

Category

Power MOSFET

Eu Rohs

Compliant

Pin Sayısı

3

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

100 V

Vgs Gatesource Voltage

- 15 V, + 15 V

Kılıf / Paket

TO-220-3

Typical Gate Charge10v Nc

52

Id Continuous Drain Current

26 A

Number Of Elements Per Chip

1

Typical Fall Time Ns

11

Maximum Drain Source Resistance Mohm

90@10V

Typical Gate Charge Vgs Nc

52@10V

Maximum Drain Source Voltage V

100

Seri

IXTP26P10

Channel Type

P

Channel Mode

Enhancement