IXTP1R6N100D2

Specifications

Pd Power Dissipation

100 W

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Parça Durumu

Active

Package Width

4.83(Max)

Package Height

9.15(Max)

Package Length

10.66(Max)

Transistor Polarity

N-Channel

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Supplier Package

TO-220AB

Qg Gate Charge

27 nC

Maximum Power Dissipation Mw

100000

Maximum Continuous Drain Current A

1.6(Min)

Seri

IXTP1R6N100

Channel Mode

Enhancement

Technology

Si

Channel Type

N

Vgs Th Gatesource Threshold Voltage

4.5 V

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

645@10V

Typical Turnoff Delay Time Ns

34

Configuration

Single

Typical Fall Time Ns

41

Maximum Drain Source Resistance Mohm

10000@0V

Typical Gate Charge Vgs Nc

27@5V

Rds On Drainsource Resistance

10 Ohms

Pcb Changed

3

Maximum Drain Source Voltage V

1000

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-220-3

Typical Rise Time Ns

65

Id Continuous Drain Current

1.6 A

Number Of Elements Per Chip

1

Ppap

No

Pin Sayısı

3

Montaj Stili

Through Hole

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

1 kV

Maximum Gate Source Voltage V

±20