IXTP1R4N120P

Specifications

Operating Junction Temperature C

150

Parça Durumu

Active

Package Width

4.83(Max)

Package Length

10.66(Max)

Package Height

9.15(Max)

Transistor Polarity

N-Channel

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Idss Ua

5

Maximum Continuous Drain Current A

1.4

Hts

8541.29.00.40

Typical Gate To Source Charge Nc

4.4

Vgs Th Gatesource Threshold Voltage

2.5 V

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

78

Typical Gate Plateau Voltage V

4.75

Maximum Positive Gate Source Voltage V

30

Configuration

Single

Rds On Drainsource Resistance

13 Ohms

Pcb Changed

3

Typical Reverse Recovery Time Ns

900

Typical Rise Time Ns

27

Ppap

No

Montaj Stili

Through Hole

Maximum Gate Source Voltage V

±30

Typical Turnon Delay Time Ns

25

Typical Gate To Drain Charge Nc

12.8

Minimum Operating Temperature

- 55 C

Tab

Tab

Maximum Diode Forward Voltage V

1.5

Pd Power Dissipation

86 W

Number Of Channels

1 Channel

Process Technology

Polar

Maximum Operating Temperature C

150

Typical Reverse Transfer Capacitance Vds Pf

7.6@25V

Supplier Package

TO-220

Maximum Power Dissipation Mw

86000

Qg Gate Charge

24.8 nC

Maximum Gate Threshold Voltage V

4.5

Channel Type

N