IXTP18P10T

Specifications

Typical Turnon Delay Time Ns

19

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant

Mounting

Through Hole

Pin Sayısı

3

Ppap

No

Maximum Gate Source Voltage V

±15

Typical Rise Time Ns

26

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

39

Typical Gate Charge Vgs Nc

39@10V

Maximum Drain Source Resistance Mohm

120@10V

Typical Fall Time Ns

22

Configuration

Single

Maximum Drain Source Voltage V

100

Pcb Changed

3

Power Dissipation

83W

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Channel Type

P

Typical Turnoff Delay Time Ns

44

Typical Input Capacitance Vds Pf

2100@25V

Supplier Package

TO-220AB

Automotive

No

Hts

8541.29.00.95

Maximum Continuous Drain Current A

18

Maximum Power Dissipation Mw

83000

Package Length

10.66(Max)

Package Height

9.15(Max)

Parça Durumu

Active

Package Width

4.83(Max)

Continuous Drain Current Id

18A

Eccn Us

EAR99

Maximum Operating Temperature C

150