IXTP170N075T2

Specifications

Package Length

10.66(Max)

Package Height

9.15(Max)

Package Width

4.83(Max)

Parça Durumu

Active

Transistor Polarity

N-Channel

Pd Power Dissipation

360 W

Maximum Operating Temperature C

175

Number Of Channels

1 Channel

Process Technology

TrenchT2

Vgs Th Gatesource Threshold Voltage

4 V

Minimum Operating Temperature C

-55

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Typical Input Capacitance Vds Pf

6860@25V

Typical Turnoff Delay Time Ns

25

Supplier Package

TO-220

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

Unknown

Maximum Continuous Drain Current A

170

Qg Gate Charge

109 nC

Maximum Power Dissipation Mw

360000

Typical Rise Time Ns

11

Kılıf / Paket

TO-220-3

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

109

Id Continuous Drain Current

170 A

Typical Fall Time Ns

19

Typical Gate Charge Vgs Nc

109@10V

Maximum Drain Source Resistance Mohm

5.4@10V

Configuration

Single

Pcb Changed

3

Rds On Drainsource Resistance

5.4 mOhms

Maximum Drain Source Voltage V

75

Typical Turnon Delay Time Ns

19

Category

Power MOSFET

Tab

Tab

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant