IXTP120N075T2

Specifications

Qg Gate Charge

78 nC

Maximum Power Dissipation Mw

250000

Maximum Continuous Drain Current A

120

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

Unknown

Supplier Package

TO-220

Typical Turnoff Delay Time Ns

21

Typical Input Capacitance Vds Pf

4740@25V

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4 V

Number Of Channels

1 Channel

Maximum Operating Temperature C

175

Pd Power Dissipation

250 W

Transistor Polarity

N-Channel

Package Width

4.83(Max)

Parça Durumu

Active

Package Length

10.66(Max)

Package Height

9.15(Max)

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

75 V

Pin Sayısı

3

Ppap

Unknown

Mounting

Through Hole

Montaj Stili

Through Hole

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

13

Maximum Drain Source Voltage V

75

Rds On Drainsource Resistance

7.7 mOhms

Pcb Changed

3

Configuration

Single

Typical Gate Charge Vgs Nc

78@10V

Maximum Drain Source Resistance Mohm

7.7@10V

Typical Fall Time Ns

18

Id Continuous Drain Current

120 A