IXTP05N100

Specifications

Typical Rise Time Ns

19

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

7.8

Typical Fall Time Ns

28

Typical Gate Charge Vgs Nc

7.8@10V

Maximum Drain Source Resistance Mohm

17000@10V

Configuration

Single

Pcb Changed

3

Maximum Drain Source Voltage V

1000

Typical Turnon Delay Time Ns

11

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Maximum Gate Source Voltage V

±30

Package Height

9.15(Max)

Package Length

10.66(Max)

Parça Durumu

Active

Package Width

4.82(Max)

Maximum Operating Temperature C

150

Minimum Operating Temperature C

-55

Material

Si

Channel Type

N

Channel Mode

Enhancement

Typical Input Capacitance Vds Pf

260@25V

Typical Turnoff Delay Time Ns

40

Supplier Package

TO-220AB

Automotive

No

Maximum Continuous Drain Current A

0.75

Maximum Power Dissipation Mw

40000