IXTP02N120P

Specifications

Pd Power Dissipation

33 W

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Supplier Package

TO-220

Maximum Power Dissipation Mw

33000

Qg Gate Charge

4.7 nC

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Typical Input Capacitance Vds Pf

104@25V

Typical Gate Charge Vgs Nc

4.7@10V

Maximum Drain Source Resistance Mohm

75000@10V

Typical Fall Time Ns

39

Svhc Exceeds Threshold

Yes

Maximum Drain Source Voltage V

1200

Kılıf / Paket

TO-220-3

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Elements Per Chip

1

Id Continuous Drain Current

200 mA

Typical Gate Charge10v Nc

4.7

Mounting

Through Hole

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

1.2 kV

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Svhc

Yes

Package Length

10.66(Max)

Package Height

9.15(Max)

Package Width

4.83(Max)

Parça Durumu

Active

Transistor Polarity

N-Channel

Continuous Drain Current Id

200mA

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Hts

8541.29.00.95

Maximum Continuous Drain Current A

0.2

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4 V

Typical Turnoff Delay Time Ns

21

Configuration

Single