IXTN8N150L

Specifications

Parça Durumu

Active

Package Width

25.42(Max)

Package Length

38.23(Max)

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

8000@25V

Typical Turnoff Delay Time Ns

90

Material

Si

Channel Type

N

Channel Mode

Enhancement

Maximum Gate Source Leakage Current Na

200

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

545000

Maximum Idss Ua

25

Maximum Gate Threshold Voltage V

8

Maximum Continuous Drain Current A

7.5

Automotive

No

Supplier Package

SOT-227B

Typical Gate Charge10v Nc

250

Number Of Elements Per Chip

1

Typical Rise Time Ns

18

Pcb Changed

4

Maximum Drain Source Voltage V

1500

Configuration

Single Dual Source

Typical Fall Time Ns

95

Maximum Drain Source Resistance Mohm

3600@20V

Typical Gate Charge Vgs Nc

250@15V

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Typical Turnon Delay Time Ns

36

Maximum Gate Source Voltage V

±30

Ppap

No

Pin Sayısı

4

Mounting

Screw