IXTN660N04T4

Specifications

Typical Output Capacitance Pf

6500@25V

Power Dissipation

1.04kW

Typical Reverse Recovery Time Ns

60

Maximum Drain Source Voltage V

40

Pcb Changed

4

Configuration

Single Dual Source

Maximum Drain Source Resistance Mohm

0.85@10V

Typical Gate Charge Vgs Nc

860@10V

Typical Fall Time Ns

260

Typical Gate Charge10v Nc

860

Number Of Elements Per Chip

1

Minimum Gate Threshold Voltage V

2

Typical Rise Time Ns

430

Maximum Pulsed Drain Current Tc25c A

1800

Pin Sayısı

4

Ppap

No

Mounting

Screw

Eu Rohs

Compliant with Exemption

Typical Gate To Drain Charge Nc

290

Category

Power MOSFET

Typical Turnon Delay Time Ns

40

Process Technology

TMOS

Maximum Operating Temperature C

175

Maximum Diode Forward Voltage V

1.4

Continuous Drain Current Id

660A

Package Width

25.07(Max)

Parça Durumu

Active

Package Length

38.23(Max)

Typical Reverse Transfer Capacitance Vds Pf

3500@25V

Maximum Gate Threshold Voltage V

4

Maximum Idss Ua

10

Maximum Power Dissipation Mw

1040000

Typical Gate To Source Charge Nc

240

Maximum Continuous Drain Current A

660

Automotive

No

Supplier Package

SOT-227B

Typical Gate Plateau Voltage V

5.8

Typical Turnoff Delay Time Ns

386

Typical Input Capacitance Vds Pf

44000@25V

Channel Type

N