IXTN600N04T2

Specifications

Typical Turnoff Delay Time Ns

90

Typical Input Capacitance Vds Pf

40000@25V

Channel Type

N

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

200

Maximum Idss Ua

10

Maximum Gate Threshold Voltage V

3.5

Maximum Power Dissipation Mw

940000

Hts

8541.29.00.95

Maximum Continuous Drain Current A

600

Automotive

No

Supplier Package

SOT-227B

Continuous Drain Current Id

600A

Eccn Us

EAR99

Package Width

25.42(Max)

Parça Durumu

Active

Package Length

38.23(Max)

Process Technology

GigaMOS

Maximum Operating Temperature C

175

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Typical Turnon Delay Time Ns

40

Maximum Gate Source Voltage V

±20

Pin Sayısı

4

Ppap

No

Mounting

Screw

Typical Gate Charge10v Nc

590

Number Of Elements Per Chip

1

Typical Rise Time Ns

20

Power Dissipation

940W

Maximum Drain Source Voltage V

40

Pcb Changed

4

Configuration

Single Dual Source

Maximum Drain Source Resistance Mohm

1.3@10V

Typical Gate Charge Vgs Nc

590@10V

Typical Fall Time Ns

250