IXTN200N10T

Specifications

Typical Turnoff Delay Time Ns

45

Typical Input Capacitance Vds Pf

9400@25V

Minimum Operating Temperature C

-55

Vr Reverse Voltage

50 V

Channel Type

N

Technology

Si

Maximum Continuous Drain Current A

200

Maximum Power Dissipation Mw

550000

Supplier Package

SOT-227B

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

No

Package Length

38.23(Max)

Package Width

25.42(Max)

Parça Durumu

Active

Maximum Operating Temperature C

175

Pd Power Dissipation

550 W

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

35

Category

Power MOSFET

Maximum Gate Source Voltage V

±20

Mounting

Screw

Montaj Stili

Chassis Mount

Pin Sayısı

4

Ppap

No

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

152

Kılıf / Paket

SOT-227-4

Typical Rise Time Ns

31

Ürün Tipi

Discrete Semiconductor Modules

Vgs Gatesource Voltage

- 20 V, + 20 V

Maximum Drain Source Voltage V

100

Tip

Trench

Pcb Changed

4

Rds On Drainsource Resistance

5.5 mOhms

Typical Gate Charge Vgs Nc

152@10V

Maximum Drain Source Resistance Mohm

5.5@10V

Typical Fall Time Ns

34

Configuration

Single