IXTN120P20T

Specifications

Configuration

Single Dual Source

Power Dissipation

830(W)

Pcb Changed

4

Rds On Drainsource Resistance

30 mOhms

Ürün Tipi

Discrete Semiconductor Modules

Typical Rise Time Ns

85

Ppap

No

Number Of Elements

1

Montaj Stili

Chassis Mount

Maximum Gate Source Voltage V

±15

Gatesource Voltage Max

±15(V)

Operating Temperature Classification

Military

Continuous Drain Current

106(A)

Typical Turnon Delay Time Ns

90

Minimum Operating Temperature

- 55 C

Package Type

SOT-227B

Package Width

25.42(Max)

Parça Durumu

Active

Package Length

38.23(Max)

Operating Temp Range

-55C to 150C

Eccn Us

EAR99

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Maximum Idss Ua

25

Hts

8541.29.00.95

Maximum Continuous Drain Current A

106

Minimum Operating Temperature C

-55

Vr Reverse Voltage

100 V

Typical Turnoff Delay Time Ns

200

Maximum Drain Source Resistance Mohm

30@10V

Typical Gate Charge Vgs Nc

740@10V

Typical Fall Time Ns

50

Maximum Drain Source Voltage V

200

Drainsource Onvolt

200(V)

Tip

Power MOSFET

Vgs Gatesource Voltage

- 15 V, + 15 V

Kılıf / Paket

SOT-227-4

Typical Gate Charge10v Nc

740

Number Of Elements Per Chip

1

Pin Sayısı

4