IXTK600N04T2

Specifications

Process Technology

GigaMOS

Maximum Operating Temperature C

175

Package Width

5.13(Max)

Parça Durumu

Active

Package Height

26.16(Max)

Package Length

19.96(Max)

Maximum Power Dissipation Mw

1250000

Maximum Continuous Drain Current A

600

Automotive

No

Supplier Package

TO-264

Typical Input Capacitance Vds Pf

40@25V

Typical Turnoff Delay Time Ns

90

Channel Mode

Enhancement

Channel Type

N

Minimum Operating Temperature C

-55

Pcb Changed

3

Maximum Drain Source Voltage V

40

Configuration

Single

Typical Fall Time Ns

250

Maximum Drain Source Resistance Mohm

1.5@10V

Typical Gate Charge Vgs Nc

590@10V

Typical Gate Charge10v Nc

590

Number Of Elements Per Chip

1

Typical Rise Time Ns

20

Maximum Gate Source Voltage V

±20

Ppap

No

Pin Sayısı

3

Mounting

Through Hole

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

40