IXTK32P60P

Specifications

Rds On Drainsource Resistance

350 mOhms

Pcb Changed

3

Maximum Drain Source Voltage V

600

Typical Fall Time Ns

33

Maximum Drain Source Resistance Mohm

350@10V

Typical Gate Charge Vgs Nc

196@10V

Configuration

Single

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

196

Id Continuous Drain Current

32 A

Kılıf / Paket

TO-264-3

Typical Rise Time Ns

27

Vgs Gatesource Voltage

- 20 V, + 20 V

Vds Drainsource Breakdown Voltage

600 V

Maximum Gate Source Voltage V

±20

Montaj Stili

Through Hole

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Tab

Tab

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Typical Turnon Delay Time Ns

37

Category

Power MOSFET

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Pd Power Dissipation

890 W

Transistor Polarity

P-Channel

Eccn Us

EAR99

Package Length

19.96(Max)

Package Height

26.16(Max)

Parça Durumu

Active

Package Width

5.13(Max)

Maximum Continuous Drain Current A

32

Hts

8541.10.00.80

Maximum Power Dissipation Mw

890000

Qg Gate Charge

196 nC

Supplier Package

TO-264

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C