IXTK200N10L2

Specifications

Typical Reverse Transfer Capacitance Vds Pf

610

Maximum Diode Forward Voltage V

1.4

Maximum Operating Temperature C

150

Channel Mode

Enhancement

Channel Type

N

Maximum Gate Source Leakage Current Na

200

Typical Input Capacitance Vds Pf

23000@25V

Supplier Package

TO-264AA

Maximum Power Dissipation Mw

1040000

Maximum Gate Threshold Voltage V

4.5

Minimum Gate Threshold Voltage V

2

Typical Gate Charge10v Nc

540

Number Of Elements Per Chip

1

Typical Fall Time Ns

27

Maximum Drain Source Resistance Mohm

11@10V

Typical Gate Charge Vgs Nc

540@10V

Typical Output Capacitance Pf

3200

Maximum Drain Source Voltage V

100

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Mounting

Through Hole

Typical Reverse Recovery Charge Nc

3000

Maximum Pulsed Drain Current Tc25c A

500

Parça Durumu

Active

Package Width

5.13(Max)

Package Length

19.96(Max)

Package Height

26.16(Max)

Eccn Us

EAR99

Continuous Drain Current Id

200A

Operating Junction Temperature C

-55 to 150

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

127

Typical Gate Plateau Voltage V

6

Maximum Positive Gate Source Voltage V

20

Automotive

No

Maximum Idss Ua

10

Maximum Continuous Drain Current A

200

Hts

8541.29.00.95

Typical Gate To Source Charge Nc

115