IXTK170N10P

Specifications

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

100 V

Mounting

Through Hole

Montaj Stili

Through Hole

Pin Sayısı

3

Ppap

No

Tab

Tab

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

35

Category

Power MOSFET

Maximum Drain Source Voltage V

100

Pcb Changed

3

Rds On Drainsource Resistance

9 mOhms

Typical Gate Charge Vgs Nc

198@10V

Maximum Drain Source Resistance Mohm

9@10V

Typical Fall Time Ns

33

Configuration

Single

Number Of Elements Per Chip

1

Id Continuous Drain Current

170 A

Typical Gate Charge10v Nc

198

Typical Rise Time Ns

50

Kılıf / Paket

TO-264-3

Vgs Gatesource Voltage

- 20 V, + 20 V

Hts

8541.29.00.95

Maximum Continuous Drain Current A

170

Maximum Power Dissipation Mw

715000

Supplier Package

TO-264

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

No

Typical Turnoff Delay Time Ns

90

Typical Input Capacitance Vds Pf

6000@25V

Minimum Operating Temperature C

-55

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Maximum Operating Temperature C

175

Process Technology

Polar

Number Of Channels

1 Channel

Pd Power Dissipation

714 W