IXTK150N15P

Specifications

Typical Turnon Delay Time Ns

30

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Minimum Operating Temperature

- 55 C

Montaj Stili

Through Hole

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

150 V

Maximum Gate Source Voltage V

±20

Kılıf / Paket

TO-264-3

Typical Rise Time Ns

33

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

190

Id Continuous Drain Current

150 A

Typical Fall Time Ns

28

Maximum Drain Source Resistance Mohm

13@10V

Typical Gate Charge Vgs Nc

190@10V

Configuration

Single

Rds On Drainsource Resistance

13 mOhms

Pcb Changed

3

Maximum Drain Source Voltage V

150

Vgs Th Gatesource Threshold Voltage

5 V

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Technology

Si

Channel Type

N

Typical Input Capacitance Vds Pf

5800@25V

Typical Turnoff Delay Time Ns

100

Supplier Package

TO-264

Automotive

No

Maks. Çalışma Sıcaklığı

+ 175 C

Maximum Continuous Drain Current A

150

Hts

8541.29.00.95

Maximum Power Dissipation Mw

714000

Qg Gate Charge

190 nC

Package Length

19.96(Max)

Package Height

26.16(Max)