IXTK120P20T

Specifications

Maximum Continuous Drain Current A

120

Hts

8541.29.00.95

Maximum Power Dissipation Mw

1040000

Maximum Idss Ua

25

Maximum Gate Threshold Voltage V

4.5

Supplier Package

TO-264AA

Automotive

No

Typical Input Capacitance Vds Pf

73000@25V

Typical Turnoff Delay Time Ns

200

Maximum Gate Source Leakage Current Na

200

Minimum Operating Temperature C

-55

Channel Type

P

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Process Technology

TrenchFET

Eccn Us

EAR99

Continuous Drain Current Id

120A

Package Height

26.16(Max)

Package Length

19.96(Max)

Parça Durumu

Active

Package Width

5.13(Max)

Maximum Gate Source Voltage V

±15

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

90

Category

Power MOSFET

Pcb Changed

3

Maximum Drain Source Voltage V

200

Power Dissipation

1.04kW

Typical Fall Time Ns

50

Maximum Drain Source Resistance Mohm

30@10V

Typical Gate Charge Vgs Nc

740@10V

Configuration

Single

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

740

Typical Rise Time Ns

85