IXTK102N65X2

Specifications

Typical Gate Charge10v Nc

152

Number Of Elements Per Chip

1

Typical Rise Time Ns

28

Maximum Drain Source Voltage V

650

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

30@10V

Typical Fall Time Ns

11

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

37

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Package Width

5.13(Max)

Parça Durumu

Active

Package Height

26.16(Max)

Package Length

19.96(Max)

Maximum Operating Temperature C

150

Typical Turnoff Delay Time Ns

67

Typical Input Capacitance Vds Pf

10900@25V

Channel Mode

Enhancement

Channel Type

N

Maximum Gate Source Leakage Current Na

100

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Maximum Idss Ua

25

Maximum Power Dissipation Mw

1040000

Maximum Continuous Drain Current A

102

Automotive

No

Supplier Package

TO-264