IXTJ6N150

Specifications

Maximum Drain Source Voltage V

1500

Typical Gate Charge Vgs Nc

67@10V

Maximum Drain Source Resistance Mohm

3850@10V

Typical Fall Time Ns

38

Number Of Elements Per Chip

1

Id Continuous Drain Current

3 A

Typical Gate Charge10v Nc

67

Kılıf / Paket

TO-247-3

Vgs Gatesource Voltage

- 30 V, + 30 V

Vds Drainsource Breakdown Voltage

1.5 kV

Mounting

Through Hole

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Pd Power Dissipation

125 W

Maximum Gate Threshold Voltage V

5

Maximum Power Dissipation Mw

125000

Qg Gate Charge

67 nC

Supplier Package

TO-247 ISO

Typical Input Capacitance Vds Pf

2230@25V

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Seri

IXTJ6N150

Pcb Changed

3

Rds On Drainsource Resistance

3.85 Ohms

Configuration

Single

Typical Rise Time Ns

20

Maximum Gate Source Voltage V

±30

Montaj Stili

Through Hole

Ppap

No

Tab

Tab

Minimum Operating Temperature

- 55 C

Typical Turnon Delay Time Ns

22

Transistor Polarity

N-Channel

Eccn Us

EAR99

Package Length

16.13(Max)