IXTH90P10P

Specifications

Maximum Power Dissipation Mw

462000

Qg Gate Charge

120 nC

Supplier Package

TO-247

Typical Input Capacitance Vds Pf

5800@25V

Technology

Si

Channel Mode

Enhancement

Channel Type

P

Process Technology

PolarP

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Pd Power Dissipation

462 W

Vds Drainsource Breakdown Voltage

100 V

Pin Sayısı

3

Mounting

Through Hole

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Maximum Drain Source Voltage V

100

Svhc Exceeds Threshold

Yes

Maximum Drain Source Resistance Mohm

25@10V

Typical Gate Charge Vgs Nc

120@10V

Typical Fall Time Ns

32

Id Continuous Drain Current

90 A

Typical Gate Charge10v Nc

120

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-247-3

Hts

8541.21.00.95

Maximum Continuous Drain Current A

90

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Typical Turnoff Delay Time Ns

54

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2 V

Svhc

Yes

Continuous Drain Current Id

90A

Transistor Polarity

P-Channel

Parça Durumu

Active

Package Width

5.3(Max)

Package Length

16.26(Max)

Package Height

21.46(Max)