IXTH7P50

Specifications

Maximum Gate Source Voltage V

±20

Ppap

No

Pin Sayısı

3

Mounting

Through Hole

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

33

Pcb Changed

3

Maximum Drain Source Voltage V

500

Svhc Exceeds Threshold

Yes

Configuration

Single

Typical Fall Time Ns

35

Typical Gate Charge Vgs Nc

130@10V

Maximum Drain Source Resistance Mohm

1500@10V

Typical Gate Charge10v Nc

130

Number Of Elements Per Chip

1

Typical Rise Time Ns

27

Maximum Power Dissipation Mw

180000

Maximum Continuous Drain Current A

7

Automotive

No

Supplier Package

TO-247AD

Typical Input Capacitance Vds Pf

3400@25V

Typical Turnoff Delay Time Ns

35

Material

Si

Channel Type

P

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Svhc

Yes

Maximum Operating Temperature C

150

Eccn Us

EAR99

Parça Durumu

Active

Package Width

5.3(Max)

Package Height

21.46(Max)

Package Length

16.26(Max)