IXTH76N25T

Specifications

Automotive

No

Typical Gate Charge Vgs Nc

92@10V

Process Technology

TrenchFET

Maximum Continuous Drain Current A

76

Package Width

5.3(Max)

Supplier Package

TO-247

Typical Turnon Delay Time Ns

22

Tab

Tab

Maximum Gate Source Voltage V

±30

Channel Mode

Enhancement

Maximum Power Dissipation Mw

460000

Configuration

Single

Package Length

16.26(Max)

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

4920@25V

Ppap

No

Typical Rise Time Ns

25

Package Height

21.46(Max)

Eu Rohs

Compliant with Exemption

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Channel Type

N

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

29

Maximum Drain Source Voltage V

250

Number Of Elements Per Chip

1

Mounting

Through Hole

Svhc

Yes

Typical Gate Charge10v Nc

92

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

44@10V

Typical Turnoff Delay Time Ns

56