IXTH75N10L2

Specifications

Maximum Drain Source Resistance Mohm

21@10V

Parça Durumu

Active

Number Of Elements Per Chip

1

Mounting

Through Hole

Rds On Drainsource Resistance

21 mOhms

Typical Gate Charge10v Nc

215

Svhc

Yes

Vds Drainsource Breakdown Voltage

100 V

Pin Sayısı

3

Channel Type

N

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Input Capacitance Vds Pf

8100@25V

Technology

Si

Ppap

No

Package Length

16.26(Max)

Maximum Gate Source Voltage V

±20

Tab

Tab

Continuous Drain Current Id

75A

Maximum Power Dissipation Mw

400000

Channel Mode

Enhancement

Maximum Continuous Drain Current A

75

Package Width

5.3(Max)

Typical Turnon Delay Time Ns

23

Supplier Package

TO-247

Automotive

No

Qg Gate Charge

215 nC

Montaj Stili

Through Hole

Typical Turnoff Delay Time Ns

68

Maximum Drain Source Voltage V

100

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Package Height

21.46(Max)

Typical Fall Time Ns

15

Seri

IXTH75N10

Kılıf / Paket

TO-247-3

Pcb Changed

3

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Rise Time Ns

14