IXTH6N100D2

Specifications

Technology

Si

Typical Rise Time Ns

80

Ppap

No

Kılıf / Paket

TO-247-3

Typical Input Capacitance Vds Pf

2650@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Fall Time Ns

47

Maximum Operating Temperature C

150

Category

Power MOSFET

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Package Height

21.46(Max)

Svhc

Yes

Vds Drainsource Breakdown Voltage

1 kV

Number Of Elements Per Chip

1

Mounting

Through Hole

Rds On Drainsource Resistance

2.2 Ohms

Maximum Drain Source Voltage V

1000

Typical Turnoff Delay Time Ns

34

Maximum Drain Source Resistance Mohm

2200@0V

Parça Durumu

Active

Qg Gate Charge

95 nC

Montaj Stili

Through Hole

Pd Power Dissipation

300 W

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

95@5V

Automotive

No

Typical Turnon Delay Time Ns

25

Supplier Package

TO-247

Package Width

5.3(Max)

Continuous Drain Current Id

6A

Maximum Power Dissipation Mw

300000

Channel Mode

Depletion

Number Of Channels

1 Channel

Maximum Gate Source Voltage V

±20