IXTH64N10L2

Specifications

Continuous Drain Current Id

64A

Maximum Power Dissipation Mw

357000

Channel Mode

Enhancement

Maximum Gate Source Voltage V

±20

Tab

Tab

Package Length

16.13(Max)

Automotive

No

Typical Turnon Delay Time Ns

14

Supplier Package

TO-247

Maximum Gate Threshold Voltage V

4.5

Package Width

5.21(Max)

Maximum Continuous Drain Current A

64

Typical Gate Charge10v Nc

100

Svhc

Yes

Vds Drainsource Breakdown Voltage

100 V

Number Of Elements Per Chip

1

Mounting

Through Hole

Rds On Drainsource Resistance

32 mOhms

Maximum Idss Ua

5

Maximum Drain Source Resistance Mohm

32@10V

Parça Durumu

Active

Technology

Si

Ppap

No

Typical Input Capacitance Vds Pf

3620@25V

Maximum Operating Temperature C

150

Category

Power MOSFET

Pin Sayısı

3

Channel Type

N

Number Of Channels

1 Channel

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

64 A

Power Dissipation

357W

Configuration

Single

Pd Power Dissipation

357 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

100@10V

Maximum Drain Source Voltage V

100

Maximum Gate Source Leakage Current Na

100