IXTH62N65X2

Specifications

Maximum Drain Source Voltage V

650

Maximum Gate Source Leakage Current Na

100

Mounting

Through Hole

Number Of Elements Per Chip

1

Svhc

Yes

Parça Durumu

Active

Maximum Idss Ua

25

Typical Turnoff Delay Time Ns

65

Maximum Drain Source Resistance Mohm

50@10V

Typical Input Capacitance Vds Pf

5940@25V

Minimum Operating Temperature C

-55

Pcb Changed

3

Ppap

No

Typical Rise Time Ns

18

Package Height

21.46(Max)

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Fall Time Ns

5

Maximum Gate Source Voltage V

±30

Tab

Tab

Channel Mode

Enhancement

Maximum Power Dissipation Mw

780000

Configuration

Single

Package Length

16.26(Max)

Automotive

No

Maximum Continuous Drain Current A

62

Package Width

5.3(Max)

Maximum Gate Threshold Voltage V

5

Supplier Package

TO-247

Typical Turnon Delay Time Ns

29