IXTH52N65X

Specifications

Montaj Stili

Through Hole

Qg Gate Charge

113 nC

Typical Turnoff Delay Time Ns

63

Maximum Drain Source Voltage V

650

Maximum Gate Source Leakage Current Na

100

Package Height

21.46(Max)

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

16

Pcb Changed

3

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

TO-247-3

Typical Rise Time Ns

57

Configuration

Single

Vgs Gatesource Voltage

- 30 V, + 30 V

Id Continuous Drain Current

52 A

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

3 V

Number Of Channels

1 Channel

Pd Power Dissipation

660 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

113@10V

Parça Durumu

NRND

Maximum Idss Ua

10

Maximum Drain Source Resistance Mohm

68@10V

Number Of Elements Per Chip

1

Mounting

Through Hole

Rds On Drainsource Resistance

68 mOhms

Svhc

Yes

Vds Drainsource Breakdown Voltage

650 V

Typical Gate Charge10v Nc

113

Pin Sayısı

3

Channel Type

N

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Input Capacitance Vds Pf

4350@25V

Ppap

No

Technology

Si

Package Length

16.26(Max)