IXTH500N04T2

Specifications

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

500 A

Package Length

16.26(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

3.5 V

Tab

Tab

Number Of Channels

1 Channel

Channel Mode

Enhancement

Maximum Power Dissipation Mw

1000000

Package Width

5.3(Max)

Maximum Continuous Drain Current A

500

Supplier Package

TO-247

Typical Turnon Delay Time Ns

37

Automotive

No

Typical Gate Charge Vgs Nc

405@10V

Pd Power Dissipation

1 kW

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Montaj Stili

Through Hole

Qg Gate Charge

405 nC

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

1.6@10V

Typical Turnoff Delay Time Ns

68

Maximum Drain Source Voltage V

40

Rds On Drainsource Resistance

1.6 mOhms

Mounting

Through Hole

Number Of Elements Per Chip

1

Vds Drainsource Breakdown Voltage

40 V

Svhc

Yes

Typical Gate Charge10v Nc

405

Package Height

21.46(Max)

Eu Rohs

Compliant with Exemption

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Seri

IXTH500N04

Category

Power MOSFET

Maximum Operating Temperature C

175

Typical Fall Time Ns

44